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IRF710 DATASHEET PDF

Ease of Paralleling. Maximum Ratings. TOAB. IRF IRF IRF NJ Semi-Conductors encourages customers to verify that datasheets are current. IRF A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power. Part, IRF Category, Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel. Description, A, V, Ohm, N-channel.

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Reliability data for Silicon Technology and Package Iirf710 represent a composite of all qualified locations. Please note that some Vishay documentation may still make reference to the IEC definition.

The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 Datahseet. B, Mar This datasheet is subject to change without notice.

IRF710 MOSFET. Datasheet pdf. Equivalent

Repetitive rating; pulse width limited by maximum junction temperature see fig. Case Temperature td off tf tr Fig.

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IRF Datasheet(PDF) – Fairchild Semiconductor

B, Mar 7 8 9 10 Fig. The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry. Drain Current Current regulator Same type as D.

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